View STU16NB50_285276.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
STU16NB50
N-CHANNEL 500V - 0.28 - 15.6A-Max220 PowerMESHTM MOSFET
TYPE ST U16NB50
s s s s s s
V DSS 500 V
R DS(on) < 0.33
ID 15.6 A
TYPICAL RDS(on) = 0.28 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 30V GATE TO SOURCE VOLTAGE RATING
1
2
3
DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 30 15.6 9.8 62 160 1.28 4.5 -65 to 150 150
( 1) ISD 16A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/6
(*) Pulse width limited by safe operating area
September 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STU16NB50
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
0.78 62.5 0.5 300
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 15.6 850 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 @ 100 C
o
Min. 500
T yp.
Max.
Unit V
V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = 30 V
T c = 125 oC
1 50 100
A A nA
ON ()
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Test Con ditions ID = 250 A ID =7.8 A 15.6 Min. 3 T yp. 4 0.28 Max. 5 0.33 Unit V A
Static Drain-source O n V GS = 10V Resistance
On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =7.8 A V GS = 0 Min. 9 2850 400 42 3710 520 55 T yp. Max. Unit S pF pF pF
2/6
STU16NB50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 250 V R G = 4.7 V DD = 400 V ID = 7.8 A VGS = 10 V I D =15.6 A V GS = 10 V Min. T yp. 30 15 67 20 30 Max. 42 21 88 Unit ns ns nC nC nC
SWITCHING OFF
Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions V DD = 400 V ID = 15.6 A R G = 4.7 V GS = 10 V Min. T yp. 20 15 35 Max. 26 21 49 Unit ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 15.6 A I SD = 15.6 A V DD = 100 V V GS = 0 di/dt = 100 A/s T j = 150 o C 600 6.8 22.5 Test Con ditions Min. T yp. Max. 15.6 62 1.6 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
3/6
STU16NB50
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
4/6
STU16NB50
Max220 MECHANICAL DATA
DIM. MIN. A A1 A2 b b1 b2 c D D1 D2 D3 e E L L1 4.3 2.2 2.9 0.7 1.25 1.2 0.45 15.9 9 0.8 2.8 2.44 10.05 13.2 3 mm TYP. MAX. 4.6 2.4 3.1 0.93 1.4 1.38 0.6 16.3 9.35 1.2 3.2 2.64 10.35 13.6 3.4 0.354 0.031 0.110 0.096 0.396 0.520 0.118 MIN. 0.169 0.087 0.114 0.027 0.049 0.047 0.18 0.626 inch TYP. MAX. 0.181 0.094 0.122 0.036 0.055 0.054 0.023 0.641 0.368 0.047 0.126 0.104 0.407 0.535 0.133
D3
D2
D1 C
A
A2
D b1 b2 b e L1 L
E
A1
P011R
5/6
STU16NB50
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysi - Malta - Mexico - Morocco - The Netherlands a Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
http://www.st.com .

▲Up To Search▲

Price & Availability of STU16NB50

	To Download STU16NB50 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .